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22 nm : ウィキペディア英語版
22 nanometer

The 22 nanometer (22 nm) node is the process step following the 32 nm in CMOS semiconductor device fabrication. The typical half-pitch (i.e., half the distance between identical features in an array) for a memory cell using the process is around 22 nm. It was first introduced by semiconductor companies in 2008 for use in memory products, while first consumer-level CPU deliveries started in April 2012.
The ITRS 2006 Front End Process Update indicates that equivalent physical oxide thickness will not scale below 0.5 nm (about twice the diameter of a silicon atom), which is the expected value at the 22 nm node. This is an indication that CMOS scaling in this area has reached a wall at this point, possibly disturbing Moore's law.
The 22 nm process was superseded by commercial 14 nm technology in 2014.
==Technology demos==

On August 18, 2008, AMD, Freescale, IBM, STMicroelectronics, Toshiba, and the College of Nanoscale Science and Engineering (CNSE) announced that they jointly developed and manufactured a 22 nm SRAM cell, built on a traditional six-transistor design on a 300 mm wafer, which had a memory cell size of just 0.1 μm2.〔(TG Daily news report )〕 The cell was printed using immersion lithography.〔(EETimes news report )〕
The 22 nm node may be the first time where the gate length is not necessarily smaller than the technology node designation. For example, a 25 nm gate length would be typical for the 22 nm node.
On September 22, 2009, during the Intel Developer Forum Fall 2009, Intel showed a 22 nm wafer and announced that chips with 22 nm technology would be available in the second half of 2011.〔(Intel announces 22nm chips for 2011 )〕 SRAM cell size is said to be 0.092 μm2, smallest reported to date.
On January 3, 2010, Intel and Micron Technology announced the first in a family of 25 nm NAND devices.
On May 2, 2011, Intel announced its first 22 nm microprocessor, codenamed Ivy Bridge, using a technology called 3-D Tri-Gate.〔(Intel 22nm 3-D Tri-Gate Transistor Technology )〕
POWER8 processors is produced in a 22 nm SOI process.〔(IBM opens Power8 kimono (a little bit more) )〕

抄文引用元・出典: フリー百科事典『 ウィキペディア(Wikipedia)
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